Plasma Treatment of Ultrathin Layered Semiconductors for Electronic Device Applications

The incorporation of two-dimensional (2D) semiconductors into future electronic devices will require electronic-grade, large-scale, and cost-effective means doping chemical control over the properties utilized materials. In general, approaches currently employed in semiconductor industry may prove ineffective or inefficient nanofabrication based on large-scale synthetic 2D monolayers. Some reasons for this include low interaction cross-sections with ion beams local variability level as-synthesized Plasma processing has emerged recent years as a promising candidate to enable modification materials time-efficient manner. However, challenges remain fine-tuning functionalization materials, such that they can act reliable building blocks monolithic components future, low-dimensional circuitry capable rivaling integrated complementary metal–oxide–semiconductor (CMOS) solutions bulk silicon. Review, we discuss progress understanding physical etching processes occur when are exposed reactive plasma. We overview aspects mobility engineering field-effect transistors (FETs) treated plasma, particular focus contact gate dielectric interfaces. also functional devices, photodetectors energy harvesters, plasma-activated summarize operational parameters encountered literature successful tuning different types